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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diode BZX84C2V4 - BZX84C51 A SOT-23 Dim A B C D E G H J K M L Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Features * * * * Planar Die Construction 350mW Power Dissipation Zener Voltages from 2.4V - 51V Ideally Suited for Automated Assembly Processes TOP VIEW B C E D G H K L M MAKING see table on page 2 the first code Maximum Ratings Forward Voltage Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Notes: @ TA = 25C unless otherwise specified Symbol @ IF = 10mA VF Pd RqJA Tj, TSTG J All Dimensions in mm Characteristic Value 0.9 350 357 -65 to +150 Unit V mW K/W C 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, 300ms pulse width, period = 5ms. 3. f = 1KHz. DS18001 Rev. P-2 1 of 3 BZX84C2V4 - BZX84C51 Electrical Characteristics @ TA = 25C unless otherwise specified Typical Temperature Coefficient @ IZT mV/C Min -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -2.7 -2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 21.4 24.4 27.4 30.4 33.4 10.0 10.0 10.0 Max 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 25.3 29.4 33.4 37.4 41.2 12.0 12.0 12.0 Type Number Marking Code Zener Voltage Range (Note 2) VZ @ IZT Nom (V) Min (V) Max (V) 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 IZT (mA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 Maximum Zener Impedance (Note 3) ZZT @ IZT (W) 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 150 170 180 ZZK @ IZK (W) 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300 300 325 350 350 375 375 400 (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Maximum Reverse Current IR (mA) 50 20 10 5.0 5.0 3.0 3.0 3.0 2.0 1.0 3.0 2.0 1.0 0.7 0.5 0.2 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VR (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 4.0 4.0 5.0 5.0 6.0 7.0 8.0 8.0 8.0 10.5 11.2 12.6 14.0 15.4 16.8 18.9 21.0 23.1 25.2 27.3 30.1 32.9 35.7 BZX84C2V4 BZX84C2V7 BZX84C3V0 BZX84C3V3 BZX84C3V6 BZX84C3V9 BZX84C4V3 BZX84C4V7 BZX84C5V1 BZX84C5V6 BZX84C6V2 BZX84C6V8 BZX84C7V5 BZX84C8V2 BZX84C9V1 BZX84C10 BZX84C11 BZX84C12 BZX84C13 BZX84C15 BZX84C16 BZX84C18 BZX84C20 BZX84C22 BZX84C24 BZX84C27 BZX84C30 BZX84C33 BZX84C36 BZX84C39 BZX84C43 BZX84C47 BZX84C51 Z11/KZB Z12/KZC Z13/KZD Z14/KZE Z15/KZF Z16/KZG Z17/KZH Z1/KZ1 Z2/KZ2 Z3/KZ3 Z4/KZ4 Z5/KZ5 Z6/KZ6 Z7/KZ7 Z8/KZ8 Z9/KZ9/8Q Y1/KY1 Y2/KY2 Y3/KY3 Y4/KY4 Y5/KY5 Y6/KY6 Y7/KY7 Y8/KY8 Y9/KY9 Y10/KYA Y11/KYB Y12/KYC Y13/KYD Y14/KYE Y15/KYF Y16/KYG Y17/KYH Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Tested with pulses, 300ms pulse width, period = 5ms. 3. f = 1KHz. DS18001 Rev. P-2 2 of 3 BZX84C2V4 - BZX84C51 500 See Note 1 50 Tj = 25C C2V7 C3V9 C5V6 C6V8 C8V2 C3V3 Pd, Power Dissipation (mW) IZ, ZENER CURRENT (mA) 400 40 C4V7 300 30 200 20 100 10 Test Current IZ 5.0mA 0 0 100 200 0 0 1 3 4 5 6 8 9 7 VZ, ZENER VOLTAGE (V) Fig. 2 Zener Breakdown Characteristics C39 C47 C43 C51 2 10 TA, Ambient Temperature, (C) Fig. 1 Power Derating Curve 30 Tj = 25C C10 C12 10 Tj = 25C IZ, ZENER CURRENT (mA) 20 C15 IZ, ZENER CURRENT (mA) 8 6 C18 Test current IZ 2mA C27 C33 C36 10 C22 Test current IZ 5mA 4 Test Current IZ 2mA 2 0 0 10 20 30 VZ, ZENER VOLTAGE (V) Fig. 3 Zener Breakdown Characteristics 1000 40 0 10 30 40 50 60 70 80 90 100 VZ, ZENER VOLTAGE (V) Fig. 4 Zener Breakdown Characteristics 20 Tj = 25 C Cj, JUNCTION CAPACITANCE (pF) VR = 1V VR = 2V 100 VR = 1V VR = 2V 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Fig. 5 Junction Capacitance vs Nominal Zener Voltage DS18001 Rev. P-2 3 of 3 BZX84C2V4 - BZX84C51 |
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